Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/7293
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dc.contributor.authorVinograd, Eduard L.-
dc.contributor.authorGoriletsky, Valentin I.-
dc.contributor.authorKovaleva, Ludmila V.-
dc.contributor.authorKorsunova, Sophia P.-
dc.contributor.authorKudin, Alexander M.-
dc.contributor.authorMitichkin, Anatoly I.-
dc.contributor.authorPanova, Alexandra N.-
dc.contributor.authorShakhova, Klavdia V.-
dc.contributor.authorShpilinskaya, Larisa N.-
dc.date.accessioned2018-08-27T21:07:28Z-
dc.date.available2018-08-27T21:07:28Z-
dc.date.issued2000-
dc.identifier.citationPatent 97112901 China; 28.01.2000ru_RU
dc.identifier.urihttp://repositsc.nuczu.edu.ua/handle/123456789/7293-
dc.description.abstractIt has been proposed a new scintillation material on a base of CsI:Tl crystal with low afterglow and hight radiation hardness.ru_RU
dc.language.isozhru_RU
dc.publisherPatent office of Chinaru_RU
dc.subjectCsI:Tl Crystalru_RU
dc.subjectScintillation materialru_RU
dc.subjectafterglowru_RU
dc.subjectradiation hardnessru_RU
dc.titleScintillation materials on a base of cesium iodide and methodb of its prepatationru_RU
dc.typeOtherru_RU
Appears in Collections:Кафедра фізико-математичних дисциплін

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