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Title: Investigation of the porous GaP layers' chemical composition and the quality of the tests carried out
Authors: Вамболь, Сергій Олександрович
Вамболь, Віола Владиславівна
Сичікова, Яна Олександрівна
Богданов, Ігор Тимофійович
Кондратенко, Олександр Миколайович
Keywords: GaP, Chemical composition, Porous semiconductors, Reproducibility, Convergence
Issue Date: Feb-2018
Publisher: Poland, Gliwice: International OCSCO World Press
Citation: Journal of Achivements in Materials and Manufacturing Engineering. – Issue 2018/2 (86). – 2018. – pp. 49 – 60
Abstract: Purpose: The purpose of this study is to establish the quality of tests for determining the chemical composition of the porous surface obtained by the method of electrochemical etching, based on the indicators of convergence and reproducibility of the results. Design/methodology/approach: The method of electrochemical etching was used to obtain layers of porous gallium phosphide, which can be used as buffer layers for nitrides formation on their basis. Por-GaP was formed in a solution of hydrofluoric acid at a current density of j =100 mA/cm2, etching was carried out for 20 minutes. The resulting structures sulfide passivation was carried out, thus avoiding the formation of an oxide film on the samples surfaces. For this purpose, porous gallium phosphide samples were kept in a sulfide solution for 10 minutes and dried in a stream of nitrogen. The chemical composition of the porous GaP surface layers has been investigated. To do this, the method of electronprobe INCA Energy microanalysis was used. The research was carried out on the entire surface of the sample in order to calculate the total spectrum of the elemental composition of the sample under study. Findings: It was established that during anodizing, the stoichiometry of the crystals investigated did not shift significantly towards the excess of gallium atoms. Oxygen is present at an insignificant concentration of 0.3%. This indicates the effectiveness of conducting the sulfide passivation of the sample surface following the electrochemical treatment. The presence of fluorine atoms that appeared on the surface as a result of the reaction with the electrolyte during etching, is observed in extremely low concentration. Experimental studies have shown that the sample chosen can be used as a standard enterprise sample when analyzing the chemical composition of the surface of porous gallium phosphide due to its convergence, reproducibility, homogeneity. In addition, the given method for determining the standard sample can be applied to other porous semiconductors. Conducting such studies is an important technological task that will allow us to create a series of standard samples of porous semiconductors of A3B5 group. Research limitations/implications: The research was carried out for porous gallium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for por-GaP obtained in other conditions, is necessary. Practical implications: The studies of the reproducibility and convergence of the experiment have an important practical significance, since it is the reproducibility of the experiment results that is the main problem to modern material science, all the more to nanoengineering. Therefore, the technique proposed, will allow the synthesis of por-GaP layers with adjustable properties, will facilitate their widespread implementation in the real sectors of industry. The obtained porous layers can be used as standard samples. Originality/value: The main problem in the nanostructures synthesis is the adjustability of properties. The technique presented allows to form stable layers of the porous gallium phosphide with the surface chemical composition known in advance. In addition, carrying out the sulfide passivation allows to stabilize por-GaP properties, which is an important process task. For the first time, a study of the presented technique as to convergence, reproducibility and homogeneity, was conducted.
ISSN: 1734-8412
Appears in Collections:Кафедра прикладної механіки

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