Investigation of scintillation characteristics for CsI:Tl and NaI:Tl crystals under different surface treatment conditions

Abstract

The influence of mechanical and chemical methods of Csl: TI and Nal: TI crystals surface treatment on their scintillation characteristics at registration of short-range ionizing radiation has been investigated. It is shown that application of ultrathin silicon dioxide powder obtained by sol-gel method and organosilicon liquids at the polishing stage provides the near-surface layer of Csl: TI and Nal: TI crystals with minimum light yield nonuniformity. After grinding of the crystal surface, the stability of scintillation characteristics can be achieved by the surface treatment with tetraethoxy silane and oligo-(siloxane hydride) liquid.