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dc.contributor.authorСичікова, Яна Олександрівна-
dc.contributor.authorБогданов, Ігор Тимофійович-
dc.contributor.authorОнищенко, Сергій Вікторович-
dc.contributor.authorВамболь, Сергій Олександрович-
dc.contributor.authorВамболь, Віола Владиславівна-
dc.contributor.authorКондратенко, Олександр Миколайович-
dc.identifier.citationMorphologies and Photoluminescence Properties of Porous n-InP [Electronic reso¬urse] / Y. Suchikova, I. Bogdanov, S. Onishchenko, S. Vambol, V. Vambol, O. Kondratenko // Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials: Applications and Properties (NAP-2017) (10 – 15 Sept. 2017). – Sumy: Sumy State University, 2017. – pp. 80 – 84 (01PCSI17-1). – Access mode:
dc.description.abstractThe samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3 – 11nm.ru_RU
dc.publisherSumy State Universityru_RU
dc.subjectporous layers; electrochemical etching; photoluminescence; nanostructures; indium phosphideru_RU
dc.titleMorphologies and Photoluminescence Properties of Porous n-InPru_RU
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