Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/6073
Title: Morphologies and Photoluminescence Properties of Porous n-InP
Authors: Сичікова, Яна Олександрівна
Богданов, Ігор Тимофійович
Онищенко, Сергій Вікторович
Вамболь, Сергій Олександрович
Вамболь, Віола Владиславівна
Кондратенко, Олександр Миколайович
Keywords: porous layers; electrochemical etching; photoluminescence; nanostructures; indium phosphide
Issue Date: 15-Sep-2017
Publisher: Sumy State University
Citation: Morphologies and Photoluminescence Properties of Porous n-InP [Electronic reso¬urse] / Y. Suchikova, I. Bogdanov, S. Onishchenko, S. Vambol, V. Vambol, O. Kondratenko // Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials: Applications and Properties (NAP-2017) (10 – 15 Sept. 2017). – Sumy: Sumy State University, 2017. – pp. 80 – 84 (01PCSI17-1). – Access mode: http://nap.sumdu.edu.ua/index.php/nap/nap2017.
Abstract: The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3 – 11nm.
URI: http://repositsc.nuczu.edu.ua/handle/123456789/6073
ISBN: 978-1-5386-2810-2
Appears in Collections:Кафедра прикладної механіки

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