Кореляція технологічних чинників синтези por-GaP та його набутих властивостей

Abstract

Technological factors are established for formation of the porous layer on the surface of monocrystalline gallium phosphide using the method of electro-chemical etching. To formulate technological factors ensuring the formation of porous layers of the prescribed level of quality, the duration of etching, current density, and electrolyte are referred. Correlation of these factors and morphological properties of por-GaP is established. As revealed, the porosity of gallium phosphide is almost linearly dependent on the duration of etching. In addition, correlation is observed with the current density, at which the an-odization is carried out. As established, under too high current density, pore-formation almost does not occur. Instead, the electrochemical polishing of specimen surface takes place. Based on the results of studies, the criterion of quality of morphological composition of gallium-phosphide porous layers is proposed that takes in consideration all characteristic indices of the porous surface. According to this criterion, three examined specimens from twenty ones can be referred to the group of standards. However, for the establish-ment of level of quality of nanostructures, it is necessary to carry out the es-timation using other criteria as well. The understanding of chemical composi-tion of nanostructures is of the extreme importance, since a porous surface shows the ability to be overgrown with oxides. For industrial application of nanostructures, the estimation of technological and economic criteria is also necessary. In addition, more and more researchers state about risks for the environment, which arise during the synthesis and usage of nanotechnologi-cal products, as well as ways to decrease their negative impact. Therefore, it is necessary to carry out a complex estimation of nanomaterials that should be based on the systems approach taking into account all criteria of quality of nanostructures.