Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/3305
Title: Color centers in heavily irradiated CsI(Tl) crystals
Authors: Мелешко, А.
Яковлев, В.
Трефилова, Л.Н.
Keywords: кристали CsI:Tl
люминесценция
поглинання
спектроскопія
схема електронних переходів
УФ-світло
розробка датчиків
сцинтиляційні матеріали
Issue Date: 2008
Publisher: Elsevier
Citation: Journal of Luminescence
Series/Report no.: № 128;
Abstract: The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl2+vc activator color center is suggested. According to the model the positive charge of Tl2+ ion is compensated by the negative charge of a close cation vacancy vc. The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl2+vc emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism.
Description: Методом спектроскопии с временным разрешением изучены свойства поглощения и люминесценции кристаллов CsI (Tl) окрашенных облучением. Предложенна схема электронных переходов в CsI (Tl) кристалла для объяснения появления центров окраски при воздействии ближнего УФ-излучения.
URI: http://repositsc.nuczu.edu.ua/handle/123456789/3305
Appears in Collections:Кафедра спеціальної хімії та хімічної технології

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