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Title: | The effect of oxygen-containing anions on luminescent properties of CsI |
Other Titles: | Влияние кислородсодержащих анионов на люминесцентные свойства кристаллов CsI |
Authors: | Shpilinskaya Larisa N. Zaslavsky Boris G.; Kovaleva L.V.; Vasetsky S.I. Kudin, Alexander M. |
Keywords: | luminescence emission centres cesium iodide oxygen-containing anions |
Issue Date: | 2000 |
Citation: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 3, 2 (2000) 178-180 |
Abstract: | Abstract. It has been found that from the series of oxygen-containing impurities CO32–, SO42–, HCO3–, OH–, IO3–, NO3–, NO2–, CNO–, BO2– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO3) than in CsI(SO4) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO32–-Va+ (395 nm) and the structural one – Va+-Vc– (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed. |
URI: | http://repositsc.nuczu.edu.ua/handle/123456789/4713 |
Appears in Collections: | Кафедра фізико-математичних дисциплін |
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File | Description | Size | Format | |
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Quantum_electronics.pdf | 101,79 kB | Adobe PDF | View/Open |
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