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http://repositsc.nuczu.edu.ua/handle/123456789/4750| Title: | Scintillation materials on the base of cesium iodide and method for its prepatation |
| Other Titles: | Сцинтилляционный материал на основе йодида цезия и метод его получения |
| Authors: | Vinograd, Eduard L. Goriletsky, Valentin I. Kovaleva, Ludmila V. Kudin, Alexander M. Shakhova, Klavdia V. Shpilinskaya, Larisa N. |
| Keywords: | CsI:Tl crystal afterglow co-doping radiation hardness |
| Issue Date: | 1999 |
| Publisher: | Unated States Patent |
| Citation: | Patent 5 876 630 US Mar. 2, 1999 |
| Abstract: | A cesium iodide based scintillation material is obtained exhibiting a low afterglow and high radiation hardness; its preparation method is developed, too. The cesium iodide based scintillation material doped by thallium iodide contains an additional admixture of compound having the general formula Mex (CO3) y, where Me is a cationic admixture, 1≦ X≦ 2, 1≦ Y≦ 5, This material has in its absorption spectrum a stretching vibration band of CO3 2--ion about 7 μm and a bending vibration band about 11.4 μm, the absorption coefficient of the ... |
| URI: | http://repositsc.nuczu.edu.ua/handle/123456789/4750 |
| Appears in Collections: | Кафедра фізико-математичних дисциплін |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| USA_patent.pdf | 103,95 kB | Adobe PDF | View/Open |
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