Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/6098
Title: Formation of filamentary structures of oxide on the surface of monocrystalline gallium arsenide
Authors: Вамболь, Сергій Олександрович
Богданов, Ігор Тимофійович
Вамболь, Віола Владиславівна
Сичікова, Яна Олександрівна
Кондратенко, Олександр Миколайович
Нестеренко, Т. П.
Онищенко, С. В.
Keywords: Gallium Arsenide, Semiconductor, Nanowires, Electrochemical Etching, Electrolyte
Issue Date: 15-Nov-2017
Publisher: Sumy State Univercity
Citation: Formation of filamentary structures of oxide on the surface of monocrystalline gallium arsenide [Text] / S.O. Vambol, I.T. Bohdanov, V.V. Vambol, Y.O. Suchikova, O.M. Kondratenko, T.P. Nesterenko, S.V. Onyschenko // Journal of Nano- and Electronic Physics. – Vol. 9, № 6. – Sumy: Sumy State Univercity, 2017. – pp. 06016-1 – 06016-4. – Access mode: http://jnep.sumdu.edu.ua:8080/download/numbers/2017/6/articles/JNEP_06016.pdf.
Abstract: The method of forming filamentary oxide nanocrystals on a surface of monocrystalline gallium arsenide. Nanowires were formed by electrochemical etching in hydrochloric acid and methyl. Reviewed morphological properties of the structures and the possibility of their use as gas sensors. The stability properties of nanowires is ensured by the oxide phase at their tops and on the surface. The slope of the nanowires is explained on the basis of the stability of crystallographic planes of their faces
URI: http://repositsc.nuczu.edu.ua/handle/123456789/6098
ISSN: 2077-6772
Appears in Collections:Кафедра прикладної механіки

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