Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/6098
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dc.contributor.authorВамболь, Сергій Олександрович-
dc.contributor.authorБогданов, Ігор Тимофійович-
dc.contributor.authorВамболь, Віола Владиславівна-
dc.contributor.authorСичікова, Яна Олександрівна-
dc.contributor.authorКондратенко, Олександр Миколайович-
dc.contributor.authorНестеренко, Т. П.-
dc.contributor.authorОнищенко, С. В.-
dc.date.accessioned2018-01-10T09:15:21Z-
dc.date.available2018-01-10T09:15:21Z-
dc.date.issued2017-11-15-
dc.identifier.citationFormation of filamentary structures of oxide on the surface of monocrystalline gallium arsenide [Text] / S.O. Vambol, I.T. Bohdanov, V.V. Vambol, Y.O. Suchikova, O.M. Kondratenko, T.P. Nesterenko, S.V. Onyschenko // Journal of Nano- and Electronic Physics. – Vol. 9, № 6. – Sumy: Sumy State Univercity, 2017. – pp. 06016-1 – 06016-4. – Access mode: http://jnep.sumdu.edu.ua:8080/download/numbers/2017/6/articles/JNEP_06016.pdf.ru_RU
dc.identifier.issn2077-6772-
dc.identifier.urihttp://repositsc.nuczu.edu.ua/handle/123456789/6098-
dc.description.abstractThe method of forming filamentary oxide nanocrystals on a surface of monocrystalline gallium arsenide. Nanowires were formed by electrochemical etching in hydrochloric acid and methyl. Reviewed morphological properties of the structures and the possibility of their use as gas sensors. The stability properties of nanowires is ensured by the oxide phase at their tops and on the surface. The slope of the nanowires is explained on the basis of the stability of crystallographic planes of their facesru_RU
dc.language.isoenru_RU
dc.publisherSumy State Univercityru_RU
dc.subjectGallium Arsenide, Semiconductor, Nanowires, Electrochemical Etching, Electrolyteru_RU
dc.titleFormation of filamentary structures of oxide on the surface of monocrystalline gallium arsenideru_RU
dc.typeArticleru_RU
Appears in Collections:Кафедра прикладної механіки

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