Please use this identifier to cite or link to this item: http://repositsc.nuczu.edu.ua/handle/123456789/8802
Title: Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal
Authors: Яковлев, В.
Тарахно, О.В.
Трефилова, Л.Н.
Алексеев, В.
Лебединский, А.
Шпилинская, О.
Keywords: energy transfer
luminescence
color center
radiation damage
thallium doped cesium iodide
сцинтиляційні матеріали
Issue Date: 2018
Citation: Yakovlev, V., Trefilova, L., Alekseev, V., Lebedynskiy, A., Tarakhno, O. / Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal // Functional Materials.
Abstract: Luminescence properties of Tl0va+ and Tl+vc- color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl0va+ and hole Tl+vc- color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl+ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl+ to Tl0va+ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl+ to Tl+vc- centers results in long-wave spectral shift and the duration increase of the scintillation pulse.
URI: http://repositsc.nuczu.edu.ua/handle/123456789/8802
Appears in Collections:Кафедра спеціальної хімії та хімічної технології

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