Factors which define the alpha/gamma-ratio in CsI(Tl) crystals

Abstract

It has been shown that both the light yield at α-excitation and the α/γ-ratio depend on the time of crystal storage after polishing. On the base of the idea of the formation of deformation-induced point defects in a thin surface-adjacent layer, the causes of the temporary increasing in light yield for α-particle are explained. Given is an explanation of the results obtained by Gwin and Murray concerning the relation between the α/γ ratio and the Tl concentration. In our opinion, the noted paper cannot be taken into account for experimental verification of theoretical models